收藏本站
DMN2500UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
20V
R DS(on) max
0.4 Ω @ V GS = 4.5V
0.7 Ω @ V GS = 1.8V
I D
T A = 25°C
1A
0.8A
?
?
?
?
?
?
Low On-Resistance
Very Low Gate Threshold Voltage V GS(TH) , 1.0V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surfaced Mount Package
Ultra-low package profile, 0.4mm maximum package height
?
?
?
?
ESD Protected Gate
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
?
?
?
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
?
?
DC-DC Converters
Power management functions
?
?
?
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
X2-DFN1006-3
D
S
G
Gate
Gate
ESD PROTECTED
Bottom View
Top View
Protection
Diode
Source
Ordering Information (Note 3)
Internal Schematic
EQUIVALENT CIRCUIT
Part Number
DMN2500UFB4-7
DMN2500UFB4-7B
Case
X2-DFN1006-3
X2-DFN1006-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN2500UFB4-7
NT
Top View
Dot Denotes
Drain Side
DMN2500UFB4-7B
NT
Top View
Bar Denotes Gate
and Source Side
NT = Product Type Marking Code
DMN2500UFB4
Document number: DS35724 Rev. 3 - 2
1 of 5
www.diodes.com
March 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMN26D0UDJ-7 MOSFET 2N-CH 20V 230MA SOT963
DMN26D0UFB4-7 MOSFET N-CH 20V 230MA DFN
DMN26D0UT-7 MOSFET N-CH 20V 230MA SOT523
DMN2990UDJ-7 MOSFET DL NCH 20V 450MA SOT-963
DMN2990UFA-7B MOSFET N CH 20V 510MA
DMN3005LK3-13 MOSFET N-CH 30V 14.5A TO252-3L
DMN3007LSS-13 MOSFET N-CH 30V 16A 8-SOIC
DMN3010LSS-13 MOSFET N-CH 30V 16A 8-SOIC
相关代理商/技术参数
DMN2500UFB4-7B 制造商:Diodes Incorporated 功能描述:
DMN2501UFB4-7 功能描述:MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2600UFB 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2600UFB-7 功能描述:MOSFET N-Ch Dual MOSFET 25V VDSS 8V VGSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2600UFB-7B 制造商:Zetex / Diodes Inc 功能描述:Trans MOSFET N-CH 25V 1.3A 3-Pin DFN T/R
DMN26D0UDJ 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN26D0UDJ-7 功能描述:功率驱动器IC DUAL N-CH 20V 0.23A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
DMN26D0UFB4 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR